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TLE2021B is an Excalibur high-speed low-power precision operational amplifier
Saturday,October 8,2022
TLE202x, TLE202xA and TLE202xB devices are precision, high-speed and low-power operational amplifiers, which use the new Texas Instruments Excalibur process. These devices combine the best characteristics of OP21 with significantly improved slew rate and unit gain bandwidth.

The complementary bipolar Excalibur process makes use of isolated vertical pnp transistors. Compared with similar devices, this transistor has a significant improvement in unit gain bandwidth and slew rate.

The addition of bias circuit combined with this process results in very stable time and temperature parameters. This means that even if the temperature changes and the equipment has been used for many years, the precision equipment is still a precision equipment.

The combination of excellent DC performance and common mode input voltage range including negative rails makes these devices ideal for low level signal conditioning applications in single or dual power configurations. In addition, these devices provide a phase reversal protection circuit to eliminate unexpected changes in the output state when one of the inputs is below the negative power rail.

The various options available include small form factors and AD8310ARM chip carrier versions for high-density system applications.

The C suffix device is characterized by operating in the temperature range of 0 ° C to 70 ° C. The operating temperature range of the I suffix device is – 40 ° C to 85 ° C. The M suffix device is characterized by its ability to operate in the entire military temperature range from – 55 ° C to 125 ° C.


● Power supply current...... Max. 300 μ A

● High unity gain bandwidth...... 2 MHz typical

● High conversion rate...... 0.45 V/ μ S min

● Power supply current variation in military temperature range...... 10 μ A typical value, V CC ±=± 15 V

● Specified for 5V single power supply and ± 15V operation

● Reverse phase protection

● High open-loop gain...... 6.5 V/ μ V (136 dB) typical

● Low offset voltage...... Max. 100 μ V

● Offset voltage drifts 0.005 with time μ V/mo Typ

● Low input bias current...... Max. 50 nA

● Low noise voltage...... 19 nV/√ Hz typical


Number of channels (#): 1

Total power supply voltage (Max) (+5V=5,+/- 5V=10): 40

Total power supply voltage (Min) (+5V=5,+/- 5V=10): 4

Vos (offset voltage @ 25 C) (maximum) (mV): 0.2

GBW (typical value) (MHz): 1.7

Features: -

Pendulum rate (Typ) (V/us): 0.5

Offset drift (Typ) (uV/C): 2

Iq (Typ) (mA) per channel: 0.2

Vn (typ.) at 1 kHz (nV/rtHz): 17

CMRR (typical value) (dB): 110

Operating temperature range (℃): - 55 to 125

Input bias current (Max) (pA): 70000

Output current (Typ) (mA): 3

Architecture: bipolar